DISCRETE SEMICONDUCTORS DATA SHEET BSR52 NPN Darlington transistor NXP Semiconductors Product data sheet NPN Darlington transistor FEATURES DESCRIPTION APPLICATIONS
• Industrial high gain amplification. DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION TYPE NUMBER DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). PARAMETER CONDITIONS
Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS PARAMETER CONDITIONS
thermal resistance from junction to ambient
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. PARAMETER CONDITIONS
collector-emitter saturation voltage IC = 0.5 A; IB = 0.5 mA
Switching times (between 10% and 90% levels); see
Fig.2 DC current gain; typical values.
Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times. PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions)
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. REFERENCES EUROPEAN ISSUE DATE PROJECTION DATA SHEET STATUS DOCUMENT DEFINITION
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the device. Limiting values are stress ratings only and operation of the device at these or any other conditions
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